TPC8080 Specs and Replacement

Type Designator: TPC8080

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.7 nS

Cossⓘ - Output Capacitance: 810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: SOP8

TPC8080 substitution

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TPC8080 datasheet

 ..1. Size:222K  toshiba
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TPC8080

TPC8080 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8080 TPC8080 TPC8080 TPC8080 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.2 m (typ.) (VGS = 10 V) (3) Low leakage curren... See More ⇒

 8.1. Size:238K  toshiba
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TPC8080

TPC8084 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8084 TPC8084 TPC8084 TPC8084 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.4 m (typ... See More ⇒

 8.2. Size:222K  toshiba
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TPC8080

TPC8081 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8081 TPC8081 TPC8081 TPC8081 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.5 m (typ.) (VGS = 10 V) (3) Low leakage curren... See More ⇒

 8.3. Size:220K  toshiba
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TPC8080

TPC8087 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8087 TPC8087 TPC8087 TPC8087 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.7 m (typ.) (VGS = 10 V) (3) Low leakage curren... See More ⇒

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Detailed specifications: TPC8065-H, TPC8066-H, TPC8067-H, TPC8073, TPC8074, TPC8075, TPC8076, TPC8078, AON7403, TPC8081, TPC8082, TPC8084, TPC8085, TPC8086, TPC8087, TPC8088, TPC8092

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs