TPC8120 Datasheet and Replacement

TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 m (typ.) High forward transfer admittance: |Yfs| =80 S (typ.) Low leakage current: IDSS = -10 A (max)

TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (

TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8122 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 6.3 m (typ.) High forward transfer admittance: |Yfs| = 30S (typ.) Low leakage current: IDSS = -10A (max) (VDS = -30 V

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V

TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.0 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = -10 A (max

TPC8129MOSFETs Silicon P-Channel MOS (U-MOS)TPC8129TPC8129TPC8129TPC81291. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 17 m (typ.) (VGS = -

TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 10 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V

TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.1 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V

TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8128 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 3.9 m (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V

TPC8121 PMOS (U-MOS) TPC8121 PC : mm 2 : RDS (ON) = 8.0 m () : |Yfs| = 23 S (

TPC8127www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

TPC8123www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

TPC8129www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

TPC8121www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G