All MOSFET. TPC8120 Datasheet

 

TPC8120 MOSFET. Datasheet pdf. Equivalent

Type Designator: TPC8120

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 180 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 1440 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm

Package: SOP8

TPC8120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPC8120 Datasheet (PDF)

0.1. tpc8120.pdf Size:289K _toshiba

TPC8120
TPC8120

TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.) • High forward transfer admittance: |Yfs| =80 S (typ.) • Low leakage current: IDSS = -10 μA (max)

8.1. tpc8121.pdf Size:326K _toshiba

TPC8120
TPC8120

TPC8121 東芝電界効果トランジスタ シリコンPチャネルMOS形 (U-MOSⅤ) TPC8121 ○ ノートブックPC用 単位: mm ○ リチウムイオン2次電池用 ○ 携帯電子機器用 • 小型、薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 8.0 mΩ (標準) • 順方向伝達アドミタンスが高い。 : |Yfs| = 23 S (

8.2. tpc8122.pdf Size:276K _toshiba

TPC8120
TPC8120

TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8122 Lithium Ion Battery Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 6.3 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30S (typ.) • Low leakage current: IDSS = -10μA (max) (VDS = -30 V

 8.3. tpc8123.pdf Size:272K _toshiba

TPC8120
TPC8120

TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 36 S (typ.) • Low leakage current: IDSS = -10 μA (max

8.4. tpc8125.pdf Size:221K _toshiba

TPC8120
TPC8120

TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V

 8.5. tpc8128.pdf Size:216K _toshiba

TPC8120
TPC8120

TPC8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8128 Lithium Ion Battery Applications Unit: mm Power Management Switch Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 3.9 mΩ (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V

8.6. tpc8124.pdf Size:257K _toshiba

TPC8120
TPC8120

TPC8124 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8124 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.1 mΩ (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -40 V) • Enhancement mode: Vth = -0.8 to -2.0 V

8.7. tpc8129.pdf Size:260K _toshiba

TPC8120
TPC8120

TPC8129 MOSFETs Silicon P-Channel MOS (U-MOS) TPC8129 TPC8129 TPC8129 TPC8129 1. Applications 1. Applications 1. Applications 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -

8.8. tpc8126.pdf Size:216K _toshiba

TPC8120
TPC8120

TPC8126 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8126 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V

8.9. tpc8127.pdf Size:215K _toshiba

TPC8120
TPC8120

TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V (

Datasheet: TPC8081 , TPC8082 , TPC8084 , TPC8085 , TPC8086 , TPC8087 , TPC8088 , TPC8092 , 2SK2837 , TPC8123 , TPC8124 , TPC8125 , TPC8126 , TPC8127 , TPC8128 , TPC8129 , TPC8132 .

 

 
Back to Top