BUK473-100B
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK473-100B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
SOT186A
BUK473-100B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK473-100B
Datasheet (PDF)
4.1. Size:60K philips
buk473-100a-b.pdf 
Philips Semiconductors Product specification PowerMOS transistor BUK473-100A/B Isolated version of BUK453-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK473 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup
7.1. Size:57K philips
buk473-60a-b 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK473-60A/B Isolated version of BUK453-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK473 -60A -60Bdevice is intended foruse in Switched VDS Drain-source voltage 60 60 VMode Power Supplies
9.1. Size:55K philips
buk474-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK474-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched Ptot Total power dissipation
9.2. Size:57K philips
buk472-60a-b 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Isolated version of BUK452-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK472 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies
9.3. Size:58K philips
buk475-200a-b 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B Isolated version of BUK455-200A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK475 -200A -200Bdevice is intended foruse in Switched VDS Drain-source voltage 200 200 VMode Power Sup
9.4. Size:74K philips
buk475-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK475-60H Isolated version of BUK455-60HGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The device VDS Drain-source voltage 60 Vis intended for use in Automotive ID Drain current (DC) 22.5 Aapplications, Swi
9.5. Size:52K philips
buk472-100a buk472-100b.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup
9.6. Size:59K philips
buk472-100a-b.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK472-100A/B Isolated version of BUK452-100A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK472 -100A -100Bdevice is intended foruse in Switched VDS Drain-source voltage 100 100 VMode Power Sup
9.7. Size:59K philips
buk475-60a-b 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK475-60A/B Isolated version of BUK455-60A/BGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. The BUK475 -60A -60Bdevice is intended foruse in Switched VDS Drain-source voltage 60 60 VMode Power Supplies
Datasheet: BUK456-800A
, BUK456-800B
, BUK462-100A
, BUK463-100A
, BUK465-100A
, BUK465-200A
, BUK466-200A
, BUK473-100A
, IRFP250N
, BUK482-100A
, BUK543-100A
, BUK545-100A
, BUK545-100B
, BUK552-100A
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, BUK553-100A
, BUK555-100A
.
