BUK473-100B PDF and Equivalents Search

 

BUK473-100B Specs and Replacement


   Type Designator: BUK473-100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT186A
 

 BUK473-100B substitution

   - MOSFET ⓘ Cross-Reference Search

 

BUK473-100B datasheet

 4.1. Size:60K  philips
buk473-100a-b.pdf pdf_icon

BUK473-100B

Philips Semiconductors Product specification PowerMOS transistor BUK473-100A/B Isolated version of BUK453-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK473 -100A -100B device is intended foruse in Switched VDS Drain-source voltage 100 100 V Mode Power Sup... See More ⇒

 7.1. Size:57K  philips
buk473-60a-b 1.pdf pdf_icon

BUK473-100B

Philips Semiconductors Product specification PowerMOS transistor BUK473-60A/B Isolated version of BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK473 -60A -60B device is intended foruse in Switched VDS Drain-source voltage 60 60 V Mode Power Supplies ... See More ⇒

 9.1. Size:55K  philips
buk474-60h 1.pdf pdf_icon

BUK473-100B

Philips Semiconductors Product specification PowerMOS transistor BUK474-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched Ptot Total power dissipation ... See More ⇒

 9.2. Size:57K  philips
buk472-60a-b 1.pdf pdf_icon

BUK473-100B

Philips Semiconductors Product specification PowerMOS transistor BUK472-60A/B Isolated version of BUK452-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK472 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies... See More ⇒

Detailed specifications: BUK456-800A , BUK456-800B , BUK462-100A , BUK463-100A , BUK465-100A , BUK465-200A , BUK466-200A , BUK473-100A , IRF630 , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A .

Keywords - BUK473-100B MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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