All MOSFET. TPCF8301 Datasheet

 

TPCF8301 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPCF8301
   Marking Code: F5A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: VS8

 TPCF8301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPCF8301 Datasheet (PDF)

 ..1. Size:180K  toshiba
 tpcf8301.pdf

TPCF8301 TPCF8301

TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Y | = 4.7 S (typ.) fs Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: Vth = -0.5 to

 7.1. Size:238K  toshiba
 tpcf8305.pdf

TPCF8301 TPCF8301

TPCF8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8305TPCF8305TPCF8305TPCF83051. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 47 m (typ.) (VGS = -4.5 V)(3) Low leakage

 7.2. Size:283K  toshiba
 tpcf8304.pdf

TPCF8301 TPCF8301

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 60 m (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement model: Vth = -0.8 to -2.0 V,

 7.3. Size:225K  toshiba
 tpcf8306.pdf

TPCF8301 TPCF8301

TPCF8306MOSFETs Silicon P-Channel MOS (U-MOS)TPCF8306TPCF8306TPCF8306TPCF83061. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 90 m (typ.) (VGS = -4.5 V)(3) Low leakage current:

 7.4. Size:101K  toshiba
 tpcf8303.pdf

TPCF8301 TPCF8301

TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit: mm Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 58 m (typ.) High forward transfer admittance: |Y | = 6.0 S (typ.) fs Low leakage current: I = -10 A (max) (V = -20 V) DSS DS Enhancement-model: V = -0.45 to -

 7.5. Size:261K  toshiba
 tpcf8302.pdf

TPCF8301 TPCF8301

TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 44 m (typ.) High forward transfer admittance: |Yfs| = 6.2 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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