All MOSFET. TPCP8101 Datasheet

 

TPCP8101 Datasheet and Replacement


   Type Designator: TPCP8101
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: PS8
 

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TPCP8101 Datasheet (PDF)

 ..1. Size:223K  toshiba
 tpcp8101.pdf pdf_icon

TPCP8101

TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 0.05 M A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 24 m (typ.) ( VGS = -4.5 V) High forward transfer admittance: |Yfs| = 14 S (typ.) Low l

 7.1. Size:194K  toshiba
 tpcp8102.pdf pdf_icon

TPCP8101

TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit: mmPortable Equipment Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current:

 7.2. Size:227K  toshiba
 tpcp8109.pdf pdf_icon

TPCP8101

TPCP8109MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8109TPCP8109TPCP8109TPCP81091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 5.8 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 40.3 m (typ.) (VGS = -10 V

 7.3. Size:230K  toshiba
 tpcp8105.pdf pdf_icon

TPCP8101

TPCP8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8105TPCP8105TPCP8105TPCP81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.8 m (typ.) (VGS = -4.5

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Datasheet: TPCF8402 , TPCF8B01 , TPCP8003-H , TPCP8004 , TPCP8005-H , TPCP8006 , TPCP8007-H , TPCP8008-H , IRF540 , TPCP8102 , TPCP8103-H , TPCP8105 , TPCP8106 , TPCP8203 , TPCP8204 , TPCP8205-H , TPCP8206 .

History: TPCP8008-H

Keywords - TPCP8101 MOSFET datasheet

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