TPCP8101. Аналоги и основные параметры
Наименование производителя: TPCP8101
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.84 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 265 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: PS8
Аналог (замена) для TPCP8101
- подборⓘ MOSFET транзистора по параметрам
TPCP8101 даташит
tpcp8101.pdf
TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit mm 0.33 0.05 0.05 M A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance RDS (ON) = 24 m (typ.) ( VGS = -4.5 V) High forward transfer admittance Yfs = 14 S (typ.) Low l
tpcp8102.pdf
TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit mm Portable Equipment Applications 0.33 0.05 0.05 M A 8 5 Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 13.5 m (typ.) High forward transfer admittance Yfs = 24 S (typ.) Low leakage current
tpcp8109.pdf
TPCP8109 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8109 TPCP8109 TPCP8109 TPCP8109 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 5.8 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 40.3 m (typ.) (VGS = -10 V
tpcp8105.pdf
TPCP8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCP8105 TPCP8105 TPCP8105 TPCP8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 13.8 m (typ.) (VGS = -4.5
Другие IGBT... TPCF8402, TPCF8B01, TPCP8003-H, TPCP8004, TPCP8005-H, TPCP8006, TPCP8007-H, TPCP8008-H, IRF540, TPCP8102, TPCP8103-H, TPCP8105, TPCP8106, TPCP8203, TPCP8204, TPCP8205-H, TPCP8206
History: FTK3134KD | TPD80R900M
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
d613 transistor | fdmc8884 mosfet | k3569 mosfet equivalent | 2sa1370 | 4508nh mosfet | a94 transistor | c5149 datasheet | m1830m mosfet







