TPCP8101 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPCP8101
Маркировка: 8101
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.84 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19 nC
trⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 265 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: PS8
TPCP8101 Datasheet (PDF)
tpcp8101.pdf
TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 0.05 M A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 24 m (typ.) ( VGS = -4.5 V) High forward transfer admittance: |Yfs| = 14 S (typ.) Low l
tpcp8102.pdf
TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Unit: mmPortable Equipment Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current:
tpcp8109.pdf
TPCP8109MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8109TPCP8109TPCP8109TPCP81091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 5.8 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 40.3 m (typ.) (VGS = -10 V
tpcp8105.pdf
TPCP8105MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8105TPCP8105TPCP8105TPCP81051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 13.8 m (typ.) (VGS = -4.5
tpcp8103-h.pdf
TPCP8103-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCP8103-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications CCFL Inverter Applications 0.475 1 4B Small footprint due to a small and thin package 0.05 M B0.652.90.1 High spe
tpcp8106.pdf
TPCP8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8106TPCP8106TPCP8106TPCP81061. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) =
tpcp8107.pdf
TPCP8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8107TPCP8107TPCP8107TPCP81071. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge: QSW = 14.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 13.9 m (typ.) (VGS = -10
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100