2SJ200 PDF and Equivalents Search

 

2SJ200 PDF Specs and Replacement


   Type Designator: 2SJ200
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO3P
 

 2SJ200 substitution

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2SJ200 PDF Specs

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2SJ200

2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Dr... See More ⇒

 9.1. Size:268K  toshiba
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2SJ200

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit mm High breakdown voltage VDSS = -200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V JEDEC Gate-source voltag... See More ⇒

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2SJ200

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2SJ200

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Detailed specifications: TPCP8305 , TPCP8306 , TPCP8401 , TPCP8404 , TPCP8405 , TPCP8406 , TPCP8A05-H , TPCP8J01 , 8205A , 2SJ201 , 2SJ304 , 2SJ312 , 2SJ313 , 2SJ315 , 2SJ334 , 2SJ338 , 2SJ349 .

Keywords - 2SJ200 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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