2SJ200 - описание и поиск аналогов

2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Dr

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit mm High breakdown voltage VDSS = -200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V JEDEC Gate-source voltag

SMD Type MOSFET P-Channel MOSFET 2SJ207 1.70 0.1 Features VDS (V) =-16V ID =-1 A (VGS =-10V) 0.42 0.1 0.46 0.1 RDS(ON) 1.5 (VGS =-4V) RDS(ON) 4 (VGS =-2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID -

SMD Type MOSFET P-Channel MOSFET 2SJ204 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-30V ID =-200m A 1 2 +0.02 RDS(ON) 8 (VGS =-10V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 13 (VGS =-4V) Compementary to 2SK1582 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin

SMD Type MOSFET P-Channel MOSFET 2SJ209 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-100V 1 2 ID =-0.1 A +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 60 (VGS =-10V) RDS(ON) 100 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS

SMD Type MOSFET P-Channel MOSFET 2SJ206 1.70 0.1 Features VDS (V) =-30V ID =-0.5 A (VGS =-10V) 0.42 0.1 0.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0

SMD Type MOSFET P-Channel MOSFET 2SJ203 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) =-16V 1 2 ID =-200m A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 23 (VGS =-2.5V) RDS(ON) 10 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VD

SMD Type MOSFET P-Channel MOSFET 2SJ203 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-16V ID =-200m A 1 2 RDS(ON) 23 (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 10 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volta

SMD Type MOSFET P-Channel MOSFET 2SJ209 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-100V ID =-0.1 A 1 2 +0.02 RDS(ON) 60 (VGS =-10V) +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 RDS(ON) 100 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage

SMD Type MOSFET P-Channel MOSFET 2SJ208 1.70 0.1 Features VDS (V) =-16V ID =-2 A 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS =-4V) RDS(ON) 3 (VGS =-2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID -2 A Pulsed

SMD Type MOSFET P-Channel MOSFET 2SJ205 1.70 0.1 Features VDS (V) =-16V ID =-0.5 A (VGS =-10V) 0.42 0.1 0.46 0.1 RDS(ON) 3 (VGS =-4V) RDS(ON) 5 (VGS =-2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID -

SMD Type MOSFET P-Channel MOSFET 2SJ204 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-30V 1 2 ID =-200m A +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 8 (VGS =-10V) RDS(ON) 13 (VGS =-4V) Compementary to 2SK1582 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit