BUK553-100A PDF and Equivalents Search

 

BUK553-100A Specs and Replacement

Type Designator: BUK553-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SOT78

BUK553-100A substitution

- MOSFET ⓘ Cross-Reference Search

 

BUK553-100A datasheet

 0.1. Size:56K  philips
 buk553-100a-b 1.pdf pdf_icon

BUK553-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain ... See More ⇒

 4.1. Size:60K  philips
 buk553-100b.pdf pdf_icon

BUK553-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain ... See More ⇒

 7.1. Size:69K  philips
 buk553-48c 1.pdf pdf_icon

BUK553-100A

Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 V The device is intended for use in ID Drain current (... See More ⇒

 7.2. Size:54K  philips
 buk553-60a-b 1.pdf pdf_icon

BUK553-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK553 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain curre... See More ⇒

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Detailed specifications: BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , IRF4905 , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A , BUK581-100A , BUK582-100A , BUK7506-30 .

Keywords - BUK553-100A MOSFET specs

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