Справочник MOSFET. BUK553-100A

 

BUK553-100A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK553-100A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: SOT78

 Аналог (замена) для BUK553-100A

 

 

BUK553-100A Datasheet (PDF)

 0.1. Size:56K  philips
buk553-100a-b 1.pdf

BUK553-100A
BUK553-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain

 4.1. Size:60K  philips
buk553-100b.pdf

BUK553-100A
BUK553-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain

 7.1. Size:69K  philips
buk553-48c 1.pdf

BUK553-100A
BUK553-100A

Philips Semiconductors Product specification PowerMOS transistor BUK553-48C Voltage clamped logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope. V(CL)DSR Drain-source clamp voltage 40 48 58 VThe device is intended for use in ID Drain current (

 7.2. Size:54K  philips
buk553-60a-b 1.pdf

BUK553-100A
BUK553-100A

Philips Semiconductors Product Specification PowerMOS transistor BUK553-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK553 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre

 7.3. Size:91K  philips
buk553-60a buk553-60b.pdf

BUK553-100A
BUK553-100A

Другие MOSFET... BUK473-100A , BUK473-100B , BUK482-100A , BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , IRF1010E , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A , BUK581-100A , BUK582-100A , BUK7506-30 .

 

 
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