BUK555-100B MOSFET Datasheet: N-Ch, 100V, 13A. Full specification with pinout and replacement list

BUK555-100B Specs and Replacement

Type Designator: BUK555-100B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOT78

BUK555-100B substitution

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BUK555-100B datasheet

4.1. Size:54K philips
buk555-100a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain ... See More ⇒

4.2. Size:234K inchange semiconductor
buk555-100.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK555-100A/B DESCRIPTION Drain Source Voltage- V =100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE... See More ⇒

7.1. Size:55K philips
buk555-200a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain ... See More ⇒

7.2. Size:55K philips
buk555-60a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain curre... See More ⇒