BUK555-100B - параметры транзистора MOSFET, его аналоги, datasheet

BUK555-100B Datasheet (PDF)

4.1. Size:54K philips
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Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain

4.2. Size:234K inchange semiconductor
buk555-100.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK555-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE

7.1. Size:55K philips
buk555-200a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain

7.2. Size:55K philips
buk555-60a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre