All MOSFET. BUK555-200A Datasheet

 

BUK555-200A Datasheet and Replacement


   Type Designator: BUK555-200A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOT78
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BUK555-200A Datasheet (PDF)

 0.1. Size:55K  philips
buk555-200a-b 1.pdf pdf_icon

BUK555-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain

 4.1. Size:86K  philips
buk555-200b.pdf pdf_icon

BUK555-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain

 7.1. Size:55K  philips
buk555-60a-b 1.pdf pdf_icon

BUK555-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITlogic level field-effect powertransistor in a plastic envelope. BUK555 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain curre

 7.2. Size:69K  philips
buk555-60h 1.pdf pdf_icon

BUK555-200A

Philips Semiconductors Product specification PowerMOS transistor BUK555-60H Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor ina plastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 AAutomotive applications, Switched Ptot Tota

Datasheet: BUK543-100A , BUK545-100A , BUK545-100B , BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , 2SK3568 , BUK563-100A , BUK565-100A , BUK581-100A , BUK582-100A , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 .

History: RFL1N18L | 2SK3731 | BFC47 | SIHB22N65E | SM3117NSU | ZXMP3A17E6TA | FDC6305N

Keywords - BUK555-200A MOSFET datasheet

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