All MOSFET. 2SK2611 Datasheet

 

2SK2611 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2611

Marking Code: K2611

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 58 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 190 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO3P

2SK2611 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2611 Datasheet (PDF)

0.1. 2sk2611.pdf Size:408K _toshiba

2SK2611
2SK2611

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

0.2. 2sk2611.pdf Size:219K _inchange_semiconductor

2SK2611
2SK2611

isc N-Channel MOSFET Transistor 2SK2611DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistance.High speed switching.No secondary breakdown.Suitable for switchingregulator, DCDC control.A

 8.1. 2sk2613.pdf Size:201K _toshiba

2SK2611
2SK2611

2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 800 V) Enhancement-mod

8.2. 2sk2615.pdf Size:387K _toshiba

2SK2611
2SK2611

2SK2615 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2615 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.23 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode : Vth = 0.8 to 2.0 V (VD

 8.3. 2sk2614.pdf Size:222K _toshiba

2SK2611
2SK2611

2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOSV) 2SK2614 Unit: mmChopper Regulator, DC-DC Converter and Motor Drive 6.8 MAX. Applications 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 0.032 (typ.) High forward transfer admittance : |Yfs| = 13 S (typ.) 0.95 MAX. Low leakage current : IDSS = 1

8.4. 2sk2610.pdf Size:415K _toshiba

2SK2611
2SK2611

2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2610 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 (typ.) (ON) High forward transfer admittance : |Y | 4.4 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0

 8.5. 2sk2619.pdf Size:9K _sanyo

2SK2611

2SK2619TENTATIVEFeatures and Applications Low ON-state resistance. Low Qg Absoulute Maximum Ratings / Ta=25CunitDrain to Source Voltage VDSS 500 V 30Gate to Source Voltage VGSS VDrain Current (D.C.) 6 AIDDrain Current (Pulse) AIDP 24Allowable power Dissipation PD (TC=25C) 70 WChannel Temperature 150Tch C Storage TemperatureTstg --55 to +150 C

8.6. 2sk2617als.pdf Size:51K _sanyo

2SK2611
2SK2611

Ordering number : ENA0361A 2SK2617ALSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2617ALSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS

8.7. 2sk2616.pdf Size:113K _sanyo

2SK2611
2SK2611

Ordering number:ENN5620BN-Channel Silicon MOSFET2SK2616Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Low Qg.2083B[2SK2616]6.52.35.00.540.850.71.20.60.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK2616]6.5 2.35.0 0.540.50.851 2 30.61 : Gate1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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