All MOSFET. 2SK2611 Datasheet

 

2SK2611 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2611

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 9 A

Total Gate Charge (Qg): 58 nC

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO3P

2SK2611 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2611 Datasheet (PDF)

1.1. 2sk2611.pdf Size:408K _toshiba

2SK2611
2SK2611

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 ? (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10

4.1. 2sk2617als.pdf Size:51K _update

2SK2611
2SK2611

Ordering number : ENA0361A 2SK2617ALS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2617ALS Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS

4.2. 2sk2619.pdf Size:9K _update-mosfet

2SK2611

2SK2619 TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg Absoulute Maximum Ratings / Ta=25°C unit Drain to Source Voltage VDSS 500 V ± 30 Gate to Source Voltage VGSS V Drain Current (D.C.) 6 A ID Drain Current (Pulse) A IDP 24 Allowable power Dissipation PD (TC=25°C) 70 W Channel Temperature 150 Tch °C Storage Temperature Tstg --55 to +150 °C

 4.3. 2sk2613.pdf Size:201K _toshiba

2SK2611
2SK2611

2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit: mm Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 ? (typ.) • High forward transfer admittance: ?Yfs? = 6.0 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 800 V) • Enhancement-model: Vth

4.4. 2sk2615.pdf Size:387K _toshiba

2SK2611
2SK2611

2SK2615 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2615 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.23 ? (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 60 V) Enhancement mode : Vth = 0.8 to 2.0 V (VDS =

 4.5. 2sk2614.pdf Size:222K _toshiba

2SK2611
2SK2611

2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L -?-MOSV) 2SK2614 Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive 6.8 MAX. Applications 5.2 ± 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 0.032 ? (typ.) High forward transfer admittance : |Yfs| = 13 S (typ.) 0.95 MAX. Low leakage current : IDSS = 100

4.6. 2sk2610.pdf Size:415K _toshiba

2SK2611
2SK2611

2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2610 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 ? (typ.) (ON) High forward transfer admittance : |Y | 4.4 S (typ.) fs = Low leakage current : I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (

4.7. 2sk2616.pdf Size:113K _sanyo

2SK2611
2SK2611

Ordering number:ENN5620B N-Channel Silicon MOSFET 2SK2616 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Low Qg. 2083B [2SK2616] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SK2616] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 : Gate 1.2 0

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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