All MOSFET. 2SK2777 Datasheet

 

2SK2777 Datasheet and Replacement


   Type Designator: 2SK2777
   Marking Code: K2777
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO220FL TO220SM
 

 2SK2777 substitution

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2SK2777 Datasheet (PDF)

 ..1. Size:425K  toshiba
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2SK2777

2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (--MOSV) 2SK2777 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V

 ..2. Size:203K  inchange semiconductor
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2SK2777

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2777FEATURESWith TO-263(D2PAK) packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 8.1. Size:95K  1
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2SK2777

2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 2502SK2701A 450 30 7 28 35 130 100 30 100 450 2.0

 8.2. Size:444K  toshiba
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2SK2777

2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2776 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON-resistance : RDS (ON) = 0.75 (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - 2SK2777 MOSFET datasheet

 2SK2777 cross reference
 2SK2777 equivalent finder
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 2SK2777 substitution
 2SK2777 replacement

 

 
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