All MOSFET. 2SK3398 Datasheet

 

2SK3398 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3398
   Marking Code: K3398
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TFP SC97

 2SK3398 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3398 Datasheet (PDF)

 ..1. Size:190K  toshiba
 2sk3398.pdf

2SK3398 2SK3398

2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 m (typ.) High forward transfer admittance: |Yfs| = 9.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-mode: Vth

 8.1. Size:220K  toshiba
 2sk3399.pdf

2SK3398 2SK3398

2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3399 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ) High forward transfer admittance: |Yfs| = 5.2 S (typ) Low leakage current: IDSS = 100 A (max) (VDSS = 600 V) Enhancementmode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 8.2. Size:215K  toshiba
 2sk3397.pdf

2SK3398 2SK3398

2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3397 Relay Drive and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 3.0 V (V

 8.3. Size:151K  renesas
 2sk3391.pdf

2SK3398 2SK3398

2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, add = 58% min. (f = 836 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-AR(Package Name : UPAK )3121. Gate31 2. Source3. Drain4. S

 8.4. Size:282K  inchange semiconductor
 2sk3399k.pdf

2SK3398 2SK3398

isc N-Channel MOSFET Transistor 2SK3399KFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.5. Size:356K  inchange semiconductor
 2sk3399b.pdf

2SK3398 2SK3398

isc N-Channel MOSFET Transistor 2SK3399BFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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History: APT31M100L | MTN1634V8 | STP3N100FI | 3SK88L | STP42N65M5 | IRFR13N20DTR

 

 
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