2SK3561 Datasheet and Replacement
Type Designator: 2SK3561
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85
Ohm
Package:
TO220SIS
- MOSFET Cross-Reference Search
2SK3561 Datasheet (PDF)
..1. Size:227K toshiba
2sk3561.pdf 
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings
..2. Size:279K inchange semiconductor
2sk3561.pdf
isc N-Channel MOSFET Transistor 2SK3561FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.1. Size:214K toshiba
2sk3566.pdf
2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol
8.2. Size:227K toshiba
2sk3565.pdf
2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3565 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma
8.3. Size:233K toshiba
2sk3569.pdf
2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso
8.4. Size:223K toshiba
2sk3567.pdf
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
8.5. Size:248K toshiba
2sk3564.pdf
2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
8.6. Size:348K toshiba
2sk3563.pdf
TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK3563 unit Switching Regulator Applications 100.3 2.70.23.20.2 Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement-mode: Vth = 2
8.7. Size:245K toshiba
2sk3568.pdf
2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
8.8. Size:232K toshiba
2sk3562.pdf
2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (
8.10. Size:76K panasonic
2sk3560.pdf
Power MOSFETs2SK3560Silicon N-channel power MOSFETUnit: mm4.60.210.50.31.40.1For PDP/For high-speed switching Features Low on-resistance, low Qg1.40.1 High avalanche resistance2.50.20.80.12.540.30 to 0.3 Absolute Maximum Ratings TC = 25C(10.2)Parameter Symbol Rating Unit(8.9)Drain-source surrender voltage VDSS 230 V1 2 3Gat
8.11. Size:225K inchange semiconductor
2sk3566.pdf
isc N-Channel MOSFET Transistor 2SK3566I2SK3566FEATURESLow drain-source on-resistance:RDS(on) 6.4.Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
8.12. Size:237K inchange semiconductor
2sk3565.pdf
iscN-Channel MOSFET Transistor 2SK3565I2SK3565FEATURESLow drain-source on-resistance:RDS(ON) =2.0 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
8.13. Size:214K inchange semiconductor
2sk3569.pdf
isc N-Channel MOSFET Transistor 2SK3569DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D
8.14. Size:280K inchange semiconductor
2sk3567.pdf
isc N-Channel MOSFET Transistor 2SK3567FEATURESDrain Current : I = 3.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.15. Size:236K inchange semiconductor
2sk3564.pdf
iscN-Channel MOSFET Transistor 2SK3564I2SK3564FEATURESLow drain-source on-resistance:RDS(ON) = 3.7 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
8.16. Size:279K inchange semiconductor
2sk3563.pdf
isc N-Channel MOSFET Transistor 2SK3563FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.17. Size:253K inchange semiconductor
2sk3568.pdf
isc N-Channel MOSFET Transistor 2SK3568FEATURES Drain-source on-resistance:RDS(on) 0.52@10VLow leakage current:IDSS
8.18. Size:279K inchange semiconductor
2sk3562.pdf
isc N-Channel MOSFET Transistor 2SK3562FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
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, IRFP3710
, IRFP430
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, IRFP432
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.
History: ECH8419
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Keywords - 2SK3561 MOSFET datasheet
2SK3561 cross reference
2SK3561 equivalent finder
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