Справочник MOSFET. 2SK3561

 

2SK3561 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3561
   Маркировка: K3561
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 40 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 8 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 28 nC
   Время нарастания (tr): 26 ns
   Выходная емкость (Cd): 110 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.85 Ohm
   Тип корпуса: TO220SIS

 Аналог (замена) для 2SK3561

 

 

2SK3561 Datasheet (PDF)

 ..1. Size:227K  toshiba
2sk3561.pdf

2SK3561
2SK3561

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3561 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings

 ..2. Size:279K  inchange semiconductor
2sk3561.pdf

2SK3561
2SK3561

isc N-Channel MOSFET Transistor 2SK3561FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.1. Size:214K  toshiba
2sk3566.pdf

2SK3561
2SK3561

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3566 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 5.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol

 8.2. Size:227K  toshiba
2sk3565.pdf

2SK3561
2SK3561

2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3565 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

 8.3. Size:233K  toshiba
2sk3569.pdf

2SK3561
2SK3561

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

 8.4. Size:223K  toshiba
2sk3567.pdf

2SK3561
2SK3561

2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3567 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 8.5. Size:248K  toshiba
2sk3564.pdf

2SK3561
2SK3561

2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3564 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 8.6. Size:348K  toshiba
2sk3563.pdf

2SK3561
2SK3561

TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK3563 unit Switching Regulator Applications 100.3 2.70.23.20.2 Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement-mode: Vth = 2

 8.7. Size:245K  toshiba
2sk3568.pdf

2SK3561
2SK3561

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 8.8. Size:232K  toshiba
2sk3562.pdf

2SK3561
2SK3561

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3562 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (

 8.9. Size:137K  toshiba
2sk356.pdf

2SK3561
2SK3561

 8.10. Size:76K  panasonic
2sk3560.pdf

2SK3561
2SK3561

Power MOSFETs2SK3560Silicon N-channel power MOSFETUnit: mm4.60.210.50.31.40.1For PDP/For high-speed switching Features Low on-resistance, low Qg1.40.1 High avalanche resistance2.50.20.80.12.540.30 to 0.3 Absolute Maximum Ratings TC = 25C(10.2)Parameter Symbol Rating Unit(8.9)Drain-source surrender voltage VDSS 230 V1 2 3Gat

 8.11. Size:225K  inchange semiconductor
2sk3566.pdf

2SK3561
2SK3561

isc N-Channel MOSFET Transistor 2SK3566I2SK3566FEATURESLow drain-source on-resistance:RDS(on) 6.4.Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 8.12. Size:237K  inchange semiconductor
2sk3565.pdf

2SK3561
2SK3561

iscN-Channel MOSFET Transistor 2SK3565I2SK3565FEATURESLow drain-source on-resistance:RDS(ON) =2.0 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.13. Size:214K  inchange semiconductor
2sk3569.pdf

2SK3561
2SK3561

isc N-Channel MOSFET Transistor 2SK3569DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D

 8.14. Size:280K  inchange semiconductor
2sk3567.pdf

2SK3561
2SK3561

isc N-Channel MOSFET Transistor 2SK3567FEATURESDrain Current : I = 3.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.15. Size:236K  inchange semiconductor
2sk3564.pdf

2SK3561
2SK3561

iscN-Channel MOSFET Transistor 2SK3564I2SK3564FEATURESLow drain-source on-resistance:RDS(ON) = 3.7 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 8.16. Size:279K  inchange semiconductor
2sk3563.pdf

2SK3561
2SK3561

isc N-Channel MOSFET Transistor 2SK3563FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.17. Size:253K  inchange semiconductor
2sk3568.pdf

2SK3561
2SK3561

isc N-Channel MOSFET Transistor 2SK3568FEATURES Drain-source on-resistance:RDS(on) 0.52@10VLow leakage current:IDSS

 8.18. Size:279K  inchange semiconductor
2sk3562.pdf

2SK3561
2SK3561

isc N-Channel MOSFET Transistor 2SK3562FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Другие MOSFET... 2SK3443 , 2SK3444 , 2SK3445 , 2SK3462 , 2SK3497 , 2SK3499 , 2SK3506 , 2SK3543 , IRF740 , 2SK3562 , 2SK3563 , 2SK3567 , 2SK3568 , 2SK3569 , 2SK3625 , 2SK3662 , 2SK3667 .

 

 
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