All MOSFET. 2SK3667 Datasheet

 

2SK3667 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3667

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO220SIS

2SK3667 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3667 Datasheet (PDF)

1.1. 2sk3667.pdf Size:226K _toshiba

2SK3667
2SK3667

2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSVI) 2SK3667 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75? (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100?A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) C

4.1. 2sk3666-2-tb-e.pdf Size:247K _update

2SK3667
2SK3667

2SK3666 Ordering number : EN8158B SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET Low-Frequency General-Purpose Amplifier, 2SK3666 Impedance Converter Applications Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • Small IGSS • Small Ciss Specifications at Ta=25°C Absolute Maximum Ratings Pa

4.2. 2sk3662.pdf Size:223K _toshiba

2SK3667
2SK3667

2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSII) 2SK3662 Switching Regulator, DC-DC Converter, Motor Drive Unit: mm Applications Low drain-source ON resistance: RDS (ON) = 9.4 m? (typ.) High forward transfer admittance: |Y | = 55 S (typ.) fs Low leakage current: I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3 to 2.5 V (VDS = 1

4.3. 2sk366.pdf Size:648K _toshiba

2SK3667
2SK3667

2SK366 TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current Unit: mm and Impedance Converter Applications High voltage: VGDS = -40 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 50 ? (typ.) (IDSS = 5 mA) Small package Complementary to 2SJ107 Absolute Maximum Ratings

4.4. 2sk3669.pdf Size:227K _toshiba

2SK3667
2SK3667

2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS VII) 2SK3669 Switching Regulators, for Audio Amplifier and Motor Unit: mm Drive Applications Low drain-source ON resistance: RDS (ON) = 95 m? (typ.) High forward transfer admittance: |Y | = 6 S (typ.) fs Low leakage current: I = 100 A (max) (V = 100 V) DSS DS Enhancement-mode : Vth = 3.0 to 5.0 V

4.5. 2sk3668.pdf Size:82K _nec

2SK3667
2SK3667

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3668 is N-channel DMOS FET device that PART NUMBER PACKAGE features a low on-state resistance, low charge and excellent switching characteristics, designed for high 2SK3668-ZK TO-263 (MP-25ZK) voltage applications such as high intensity discharge lamp drive. (TO-2

4.6. 2sk3663.pdf Size:60K _nec

2SK3667
2SK3667

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3663 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine

4.7. 2sk3664.pdf Size:139K _nec

2SK3667
2SK3667

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. 0.3 +0.1 0 0.15+0.1 0.05 The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications su

4.8. 2sk3666.pdf Size:283K _onsemi

2SK3667
2SK3667

Ordering number : EN8158B 2SK3666 N-Channel JFET http://onsemi.com 30V, 0.6 to 6.0mA, 6.5mS, CP Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • Small IGSS • Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 30 V Gate-to-Drai

Datasheet: 2SK3561 , 2SK3562 , 2SK3563 , 2SK3567 , 2SK3568 , 2SK3569 , 2SK3625 , 2SK3662 , IRFP460 , 2SK3669 , 2SK3797 , 2SK3844 , 2SK3846 , 2SK3847 , 2SK3869 , 2SK3903 , 2SK3904 .

 


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