2SK3844 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3844
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 196 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm
Package: TO220NIS
2SK3844 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3844 Datasheet (PDF)
1.1. 2sk3844.pdf 
Size:228K _toshiba
2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS?) 2SK3844 Switching Regulator, DC-DC Converter Applications Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.1 m? (typ.) • High forward transfer admittance: |Yfs| = 63 S (typ.) • Low leakage current: IDSS = 100 ?A (max)(VDS = 60 V) • Enhancement mode: Vth = 2.0 to
4.1. 2sk3842.pdf Size:216K _toshiba
2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) =4.6 m? (typ.) • High forward transfer admittance: |Yfs| = 93 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 60 V) • Enhancement model: Vth =
4.2. 2sk3845.pdf Size:231K _toshiba
2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.7 m? (typ.) • High forward transfer admittance: |Yfs| = 88 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 60 V) • Enhancement model: Vth =
4.3. 2sk3846.pdf Size:182K _toshiba
2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 12 mΩ (typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~2.5 V (VDS
4.4. 2sk3847.pdf Size:997K _toshiba
2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Unit: mm Applications Low drain source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 36 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 1
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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