2SK3844 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3844
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 196 nC
trⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 1100 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm
Тип корпуса: TO220NIS
2SK3844 Datasheet (PDF)
2sk3844.pdf
2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK3844 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.1 m (typ.) High forward transfer admittance: |Yfs| = 63 S (typ.) Low leakage current: IDSS = 100 A (max)(VDS = 60 V) Enhancement mode: Vth = 2.0
2sk3844.pdf
isc N-Channel MOSFET Transistor 2SK3844FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3843.pdf
2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 2.7 m (typ.) High forward transfer admittance : |Yfs| = 120 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~3.0 V (VDS
2sk3842.pdf
2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) =4.6 m (typ.) High forward transfer admittance: |Yfs| = 93 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vth
2sk3847.pdf
2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 36 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 1
2sk3845.pdf
2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.7 m (typ.) High forward transfer admittance: |Yfs| = 88 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vt
2sk3846.pdf
2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~2.5 V (VDS
2sk3847b.pdf
isc N-Channel MOSFET Transistor 2SK3847BFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk384s.pdf
isc N-Channel MOSFET Transistor 2SK384SFEATURESDrain Current : I = 0.3A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 50(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk384l.pdf
isc N-Channel MOSFET Transistor 2SK384LFEATURESDrain Current : I = 0.3A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 50(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3845.pdf
isc N-Channel MOSFET Transistor 2SK3845FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3847k.pdf
isc N-Channel MOSFET Transistor 2SK3847KFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3846.pdf
isc N-Channel MOSFET Transistor 2SK3846FEATURESDrain Current : I = 78A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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