BUK7606-30
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7606-30
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 187
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
SOT404
BUK7606-30
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7606-30
Datasheet (PDF)
..1. Size:52K philips
buk7606-30 1.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK7606-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 75 Atrench technology. The devi
6.1. Size:320K philips
buk7506-55a buk7606-55a.pdf
BUK7506-55A; BUK7606-55ATrenchMOS standard level FETRev. 02 03 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7506-55A in SOT78 (TO-220AB)BUK7606-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q10
6.2. Size:322K philips
buk7506-75b buk7606-75b.pdf
BUK75/7606-75BTrenchMOS standard level FETRev. 02 20 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK7506-75B in SOT78 (TO-220AB)BUK7606-75B in SOT404 (D2-PAK).1.2 Features Very low on-stat
6.3. Size:56K philips
buk7606-55a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the dev
6.4. Size:910K nxp
buk7606-55a.pdf
BUK7606-55AN-channel TrenchMOS standard level FETRev. 03 1 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
6.5. Size:977K nxp
buk7606-75b.pdf
BUK7606-75BN-channel TrenchMOS standard level FETRev. 03 3 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
6.6. Size:941K nxp
buk7606-55b.pdf
BUK7606-55BN-channel TrenchMOS standard level FETRev. 02 21 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe
Datasheet: BUK7510-30
, BUK7514-30
, BUK7514-55
, BUK7518-55
, BUK7524-55
, BUK7528-55
, BUK7535-55
, BUK7575-55
, 4N60
, BUK7608-55
, BUK7610-30
, BUK7614-30
, BUK7618-30
, BUK7618-55
, BUK7620-55
, BUK7624-55
, BUK7628-55
.
