Справочник MOSFET. BUK7606-30

 

BUK7606-30 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK7606-30
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 187 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: SOT404

 Аналог (замена) для BUK7606-30

 

 

BUK7606-30 Datasheet (PDF)

 ..1. Size:52K  philips
 buk7606-30 1.pdf

BUK7606-30 BUK7606-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 75 Atrench technology. The devi

 6.1. Size:320K  philips
 buk7506-55a buk7606-55a.pdf

BUK7606-30 BUK7606-30

BUK7506-55A; BUK7606-55ATrenchMOS standard level FETRev. 02 03 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7506-55A in SOT78 (TO-220AB)BUK7606-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q10

 6.2. Size:322K  philips
 buk7506-75b buk7606-75b.pdf

BUK7606-30 BUK7606-30

BUK75/7606-75BTrenchMOS standard level FETRev. 02 20 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK7506-75B in SOT78 (TO-220AB)BUK7606-75B in SOT404 (D2-PAK).1.2 Features Very low on-stat

 6.3. Size:56K  philips
 buk7606-55a 1.pdf

BUK7606-30 BUK7606-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the dev

 6.4. Size:910K  nxp
 buk7606-55a.pdf

BUK7606-30 BUK7606-30

BUK7606-55AN-channel TrenchMOS standard level FETRev. 03 1 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

 6.5. Size:977K  nxp
 buk7606-75b.pdf

BUK7606-30 BUK7606-30

BUK7606-75BN-channel TrenchMOS standard level FETRev. 03 3 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

 6.6. Size:941K  nxp
 buk7606-55b.pdf

BUK7606-30 BUK7606-30

BUK7606-55BN-channel TrenchMOS standard level FETRev. 02 21 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe

Другие MOSFET... BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 , BUK7524-55 , BUK7528-55 , BUK7535-55 , BUK7575-55 , 13N50 , BUK7608-55 , BUK7610-30 , BUK7614-30 , BUK7618-30 , BUK7618-55 , BUK7620-55 , BUK7624-55 , BUK7628-55 .

 

 
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