All MOSFET. 2SK4012 Datasheet

 

2SK4012 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK4012

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 50 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 220 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO220SIS

2SK4012 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK4012 Datasheet (PDF)

1.1. 2sk4012.pdf Size:215K _toshiba

2SK4012
2SK4012

2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0. 33 ? (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim

4.1. 2sk401.pdf Size:117K _update

2SK4012
2SK4012

查询"2SK401"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK401"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK401"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003

4.2. 2sk4015.pdf Size:214K _toshiba

2SK4012
2SK4012

2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4015 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.4 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

 4.3. 2sk4017.pdf Size:246K _toshiba

2SK4012
2SK4012

2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mm Applications 6.5±0.2 5.2±0.2 0.6 MAX. 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.07 ? (typ.) 1.1±0.2 High forward transfer admittance : |Yfs| = 6.0 S (typ.) 0.9 Low leakage current : IDSS = 100 µA (max)

4.4. 2sk4016.pdf Size:225K _toshiba

2SK4012
2SK4012

2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4016 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

 4.5. 2sk4019.pdf Size:772K _toshiba

2SK4012
2SK4012

2SK4019 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L -?-MOS V) 2SK4019 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mm Applications 6.5±0.2 5.2±0.2 0.6 MAX. 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.17 ? (typ.) 1.1±0.2 High forward transfer admittance : |Yfs| = 4.5 S (typ.) 0.9 Low leakage current : IDSS = 100

4.6. 2sk4014.pdf Size:237K _toshiba

2SK4012
2SK4012

2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON-resistance : RDS (ON) = 1.6 ? (typ.) High forward transfer admittance : |Yfs| = 5.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, I

4.7. 2sk4013.pdf Size:221K _toshiba

2SK4012
2SK4012

2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 ? (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 640 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute

4.8. 2sk4018.pdf Size:775K _toshiba

2SK4012
2SK4012

2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L -?-MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mm Applications 6.5±0.2 5.2±0.2 0.6 MAX. 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.28 ? (typ.) 1.1±0.2 0.9 High forward transfer admittance : |Yfs| = 3.5 S (typ.) 0.6 MAX Low leakage current : ID

Datasheet: 2SK3905 , 2SK3907 , 2SK3911 , 2SK3934 , 2SK3935 , 2SK3947 , 2SK3994 , 2SK4002 , STF5N52U , 2SK4015 , 2SK4016 , 2SK4018 , 2SK4019 , 2SK4020 , 2SK4021 , 2SK4022 , 2SK4103 .

 
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