BUK7610-30 MOSFET Datasheet: N-Ch, 30V, 25A. Full specification with pinout and replacement list

BUK7610-30 Specs and Replacement

Type Designator: BUK7610-30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOT404

BUK7610-30 substitution

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BUK7610-30 datasheet

..1. Size:53K philips
buk7610-30 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7610-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 75 A trench technology. The devi... See More ⇒

6.1. Size:195K philips
buk7610-55al.pdf pdf_icon

BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropri... See More ⇒

6.2. Size:737K nxp
buk7610-100b.pdf pdf_icon

BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and ben... See More ⇒

6.3. Size:735K nxp
buk7610-55al.pdf pdf_icon

BUK7610-55AL N-channel TrenchMOS standard level FET Rev. 02 9 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the a... See More ⇒

Detailed specifications: BUK7514-55, BUK7518-55, BUK7524-55, BUK7528-55, BUK7535-55, BUK7575-55, BUK7606-30, BUK7608-55, STP80NF70, BUK7614-30, BUK7618-30, BUK7618-55, BUK7620-55, BUK7624-55, BUK7628-55, BUK7635-55, BUK7675-55