Справочник MOSFET. BUK7610-30

 

BUK7610-30 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK7610-30
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 142 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 51 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: SOT404

 Аналог (замена) для BUK7610-30

 

 

BUK7610-30 Datasheet (PDF)

 ..1. Size:53K  philips
 buk7610-30 1.pdf

BUK7610-30 BUK7610-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7610-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 75 Atrench technology. The devi

 6.1. Size:195K  philips
 buk7610-55al.pdf

BUK7610-30 BUK7610-30

BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropri

 6.2. Size:737K  nxp
 buk7610-100b.pdf

BUK7610-30 BUK7610-30

BUK7610-100BN-channel TrenchMOS standard level FET6 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.1.2 Features and ben

 6.3. Size:735K  nxp
 buk7610-55al.pdf

BUK7610-30 BUK7610-30

BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the a

Другие MOSFET... BUK7514-55 , BUK7518-55 , BUK7524-55 , BUK7528-55 , BUK7535-55 , BUK7575-55 , BUK7606-30 , BUK7608-55 , AON7506 , BUK7614-30 , BUK7618-30 , BUK7618-55 , BUK7620-55 , BUK7624-55 , BUK7628-55 , BUK7635-55 , BUK7675-55 .

 

 
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