All MOSFET. BUK7614-30 Datasheet

 

BUK7614-30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK7614-30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOT404

 BUK7614-30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7614-30 Datasheet (PDF)

 ..1. Size:53K  philips
buk7614-30 1.pdf

BUK7614-30
BUK7614-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 69 Atrench technology. The devi

 6.1. Size:52K  philips
buk7614-55.pdf

BUK7614-30
BUK7614-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 68 Atrench technology the devi

 6.2. Size:55K  philips
buk7614-55 1.pdf

BUK7614-30
BUK7614-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 68 Atrench technology the devi

 6.3. Size:68K  philips
buk7514-55a buk7614-55a.pdf

BUK7614-30
BUK7614-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 73 AUsing trench tec

Datasheet: BUK7518-55 , BUK7524-55 , BUK7528-55 , BUK7535-55 , BUK7575-55 , BUK7606-30 , BUK7608-55 , BUK7610-30 , 4435 , BUK7618-30 , BUK7618-55 , BUK7620-55 , BUK7624-55 , BUK7628-55 , BUK7635-55 , BUK7675-55 , BUK78150-55 .

History: 2N7081

 

 
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