BUK7614-30 PDF and Equivalents Search

 

BUK7614-30 Specs and Replacement

Type Designator: BUK7614-30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOT404

BUK7614-30 substitution

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BUK7614-30 datasheet

 ..1. Size:53K  philips
 buk7614-30 1.pdf pdf_icon

BUK7614-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 69 A trench technology. The devi... See More ⇒

 6.1. Size:52K  philips
 buk7614-55.pdf pdf_icon

BUK7614-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 68 A trench technology the devi... See More ⇒

 6.2. Size:55K  philips
 buk7614-55 1.pdf pdf_icon

BUK7614-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 68 A trench technology the devi... See More ⇒

 6.3. Size:68K  philips
 buk7514-55a buk7614-55a.pdf pdf_icon

BUK7614-30

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using trench tec... See More ⇒

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Detailed specifications: BUK7518-55, BUK7524-55, BUK7528-55, BUK7535-55, BUK7575-55, BUK7606-30, BUK7608-55, BUK7610-30, IRFP450, BUK7618-30, BUK7618-55, BUK7620-55, BUK7624-55, BUK7628-55, BUK7635-55, BUK7675-55, BUK78150-55

Keywords - BUK7614-30 MOSFET specs

 BUK7614-30 cross reference

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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