BUK7614-30 - параметры транзистора MOSFET, его аналоги, datasheet

BUK7614-30 Datasheet (PDF)

..1. Size:53K philips
buk7614-30 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 69 Atrench technology. The devi

6.1. Size:52K philips
buk7614-55.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 68 Atrench technology the devi

6.2. Size:55K philips
buk7614-55 1.pdf pdf_icon

6.3. Size:68K philips
buk7514-55a buk7614-55a.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 73 AUsing trench tec

Другие MOSFET... BUK7518-55 , BUK7524-55 , BUK7528-55 , BUK7535-55 , BUK7575-55 , BUK7606-30 , BUK7608-55 , BUK7610-30 , IRFB3607 , BUK7618-30 , BUK7618-55 , BUK7620-55 , BUK7624-55 , BUK7628-55 , BUK7635-55 , BUK7675-55 , BUK78150-55 .