TK13H90A1 Datasheet and Replacement
Type Designator: TK13H90A1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 53 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO3P
TK13H90A1 substitution
TK13H90A1 Datasheet (PDF)
tk13h90a1.pdf

TK13H90A1 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(MACH -MOSIV) TK13H90A1 Swiching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.78 (typ.) High forward transfer admittance : |Yfs| = 11S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V
Datasheet: 2SK4112 , 2SK4113 , 2SK4114 , TJ120F06J3 , TK07H90A , TK09H90A , TK100F04K3L , TK12D60U , AON6380 , TK150F04K3L , TK15D60U , TK15H50C , TK15J60T , TK16H60C , TK17A25D , TK19H50C , TK20A20D .
History: FDD8444-NL | PDMN66D0LDW | AON2800 | F6F70HVX2 | 2SK629 | SSF3055 | AON5820
Keywords - TK13H90A1 MOSFET datasheet
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History: FDD8444-NL | PDMN66D0LDW | AON2800 | F6F70HVX2 | 2SK629 | SSF3055 | AON5820



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