TK13H90A1 PDF and Equivalents Search

 

TK13H90A1 Specs and Replacement

Type Designator: TK13H90A1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO3P

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TK13H90A1 datasheet

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TK13H90A1

TK13H90A1 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(MACH -MOSIV) TK13H90A1 Swiching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.78 (typ.) High forward transfer admittance Yfs = 11S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V... See More ⇒

Detailed specifications: 2SK4112, 2SK4113, 2SK4114, TJ120F06J3, TK07H90A, TK09H90A, TK100F04K3L, TK12D60U, NCEP15T14, TK150F04K3L, TK15D60U, TK15H50C, TK15J60T, TK16H60C, TK17A25D, TK19H50C, TK20A20D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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