All MOSFET. TK15H50C Datasheet

 

TK15H50C Datasheet and Replacement


   Type Designator: TK15H50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P
 

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TK15H50C Datasheet (PDF)

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TK15H50C

TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) TK15H50C Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0. 33 (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, I45D = 1

Datasheet: TJ120F06J3 , TK07H90A , TK09H90A , TK100F04K3L , TK12D60U , TK13H90A1 , TK150F04K3L , TK15D60U , IRF1407 , TK15J60T , TK16H60C , TK17A25D , TK19H50C , TK20A20D , TK20A60T , TK20D60T , TK20D60U .

History: IRL60B216 | IRHNA57260

Keywords - TK15H50C MOSFET datasheet

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