All MOSFET. TK17A25D Datasheet

 

TK17A25D Datasheet and Replacement


   Type Designator: TK17A25D
   Marking Code: K17A25D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220SIS
 

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TK17A25D Datasheet (PDF)

 ..1. Size:227K  toshiba
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TK17A25D

TK17A25DMOSFETs Silicon N-Channel MOS (-MOS)TK17A25DTK17A25DTK17A25DTK17A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth =

 ..2. Size:252K  inchange semiconductor
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TK17A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A25DITK17A25DFEATURESLow drain-source on-resistance:RDS(ON) = 0.11 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

 9.1. Size:229K  toshiba
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TK17A25D

TK17A65UMOSFETs Silicon N-Channel MOS (DTMOS)TK17A65UTK17A65UTK17A65UTK17A65U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.20 (typ.)(2) High forward transfer admittance: |Yfs| = 12.0 S (typ.)(3) Low leakage current: ID

 9.2. Size:236K  toshiba
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TK17A25D

TK17A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK17A65W5TK17A65W5TK17A65W5TK17A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.) by used to Super Junction Str

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History: 2SJ358C | FRK460R | FRK9150H | SM1A23NSD

Keywords - TK17A25D MOSFET datasheet

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