Справочник MOSFET. TK17A25D

 

TK17A25D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK17A25D
   Маркировка: K17A25D
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 45 W
   Предельно допустимое напряжение сток-исток |Uds|: 250 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 17 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 43 nC
   Время нарастания (tr): 50 ns
   Выходная емкость (Cd): 110 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.15 Ohm
   Тип корпуса: TO220SIS

 Аналог (замена) для TK17A25D

 

 

TK17A25D Datasheet (PDF)

 ..1. Size:227K  toshiba
 tk17a25d.pdf

TK17A25D TK17A25D

TK17A25DMOSFETs Silicon N-Channel MOS (-MOS)TK17A25DTK17A25DTK17A25DTK17A25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth =

 ..2. Size:252K  inchange semiconductor
 tk17a25d.pdf

TK17A25D TK17A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A25DITK17A25DFEATURESLow drain-source on-resistance:RDS(ON) = 0.11 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

 9.1. Size:229K  toshiba
 tk17a65u.pdf

TK17A25D TK17A25D

TK17A65UMOSFETs Silicon N-Channel MOS (DTMOS)TK17A65UTK17A65UTK17A65UTK17A65U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.20 (typ.)(2) High forward transfer admittance: |Yfs| = 12.0 S (typ.)(3) Low leakage current: ID

 9.2. Size:236K  toshiba
 tk17a65w5.pdf

TK17A25D TK17A25D

TK17A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK17A65W5TK17A65W5TK17A65W5TK17A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.) by used to Super Junction Str

 9.3. Size:409K  toshiba
 tk17a80w.pdf

TK17A25D TK17A25D

TK17A80WMOSFETs Silicon N-Channel MOS (DTMOS)TK17A80WTK17A80WTK17A80WTK17A80W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhan

 9.4. Size:237K  toshiba
 tk17a65w.pdf

TK17A25D TK17A25D

TK17A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17A65WTK17A65WTK17A65WTK17A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 9.5. Size:253K  inchange semiconductor
 tk17a65u.pdf

TK17A25D TK17A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65UITK17A65UFEATURESLow drain-source on-resistance: RDS(ON) = 0.20 (typ.)Low leakage current: IDSS = 100 A (max) (VDS = 650 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONS

 9.6. Size:253K  inchange semiconductor
 tk17a65w5.pdf

TK17A25D TK17A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65W5ITK17A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.19 (typ.)Enhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

 9.7. Size:253K  inchange semiconductor
 tk17a80w.pdf

TK17A25D TK17A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A80WITK17A80WFEATURESLow drain-source on-resistance: RDS(ON) = 0.25 (typ.)Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.85mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

 9.8. Size:253K  inchange semiconductor
 tk17a65w.pdf

TK17A25D TK17A25D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK17A65WITK17A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.2Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)

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