All MOSFET. TK60D08J1 Datasheet

 

TK60D08J1 Datasheet and Replacement


   Type Designator: TK60D08J1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO220
 

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TK60D08J1 Datasheet (PDF)

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TK60D08J1

TK60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK60D08J1 Switching Regulator Application Unit: mm High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 m (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 A (max)

Datasheet: TK20D60U , TK20H50C , TK20J60T , TK40A10N1 , TK40D10J1 , TK40E10N1 , TK50F15J1 , TK55D10J1 , IRFB31N20D , TK65A10N1 , TK65E10N1 , TK6B60D , TK70D06J1 , TK70J06K3 , TK75J04K3Z , TK80D08K3 , TK8B50D .

History: ISZ019N03L5S | IRLML9303

Keywords - TK60D08J1 MOSFET datasheet

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