TK60D08J1 Specs and Replacement
Type Designator: TK60D08J1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO220
TK60D08J1 substitution
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TK60D08J1 datasheet
tk60d08j1.pdf
TK60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS ) TK60D08J1 Switching Regulator Application Unit mm High-Speed switching Small gate charge Qg = 86 nC (typ.) Low drain-source ON resistance RDS (ON) = 6.2 m (typ.) High forward transfer admittance Yfs = 120 S (typ.) Low leakage current IDSS = 10 A (max)... See More ⇒
Detailed specifications: TK20D60U, TK20H50C, TK20J60T, TK40A10N1, TK40D10J1, TK40E10N1, TK50F15J1, TK55D10J1, IRF2807, TK65A10N1, TK65E10N1, TK6B60D, TK70D06J1, TK70J06K3, TK75J04K3Z, TK80D08K3, TK8B50D
Keywords - TK60D08J1 MOSFET specs
TK60D08J1 cross reference
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TK60D08J1 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPD70R1K4CE | 2SK1081-01 | AOTF4N90 | IPD65R1K5CE | AOTF4T60P | SVF5N60F | SMF2N65
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