TPC6006-H PDF Specs and Replacement
Type Designator: TPC6006-H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 73 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: VS6
TPC6006-H substitution
TPC6006-H PDF Specs
tpc6006-h.pdf
TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 2.4 nC (typ.) Low drain-source ON-resistance RDS (ON) = 59 m (typ.) High forward transfer... See More ⇒
tpc6007-h.pdf
TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit mm Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 1.8 nC (typ.) Low drain-source ON-resistance RDS (ON) = 40 m (typ.) High forward transfer admittance ... See More ⇒
tpc6008-h.pdf
TPC6008-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6008-H TPC6008-H TPC6008-H TPC6008-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 0.9 nC (typ.) (4) Lo... See More ⇒
tpc6009-h.pdf
TPC6009-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6009-H TPC6009-H TPC6009-H TPC6009-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 1.0 nC (typ.) (4) Lo... See More ⇒
Detailed specifications: TK75J04K3Z , TK80D08K3 , TK8B50D , TK9A20DA , TPC6001 , TPC6003 , TPC6004 , TPC6005 , IRF830 , TPC6007-H , TPC6101 , TPC6102 , TPC6104 , TPC6105 , TPC6106 , TPC6107 , TPC6108 .
Keywords - TPC6006-H MOSFET specs
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