TPC6006-H - описание и поиск аналогов

TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 2.4 nC (typ.) Low drain-source ON-resistance RDS (ON) = 59 m (typ.) High forward transfer

TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit mm Small footprint due to small and thin package High-speed switching Small gate charge Qsw = 1.8 nC (typ.) Low drain-source ON-resistance RDS (ON) = 40 m (typ.) High forward transfer admittance

TPC6008-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6008-H TPC6008-H TPC6008-H TPC6008-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 0.9 nC (typ.) (4) Lo

TPC6009-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC6009-H TPC6009-H TPC6009-H TPC6009-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 1.0 nC (typ.) (4) Lo

TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance R = 21 m (typ.) DS (ON) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancementmode Vth = 0.5 to 1.2 V (VDS =

TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 15 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 10

TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 7 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10

TPC6004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2 V (VDS = 1