TPC8001 MOSFET Datasheet: N-Ch, 30V, 7A. Full specification with pinout and replacement list

TPC8001 Specs and Replacement

Type Designator: TPC8001

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 760 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

TPC8001 substitution

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TPC8001 datasheet

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TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) TPC8001 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance R = 15 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current... See More ⇒

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TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) TPC8004 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance R = 37 m (typ.) DS (ON) High forward transfer admittance Y = 6 S (typ.) fs Low leakage current... See More ⇒

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TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance R = 5.4 m (typ.) DS (ON) High forward transfer admittance Y = 21 S (typ.) fs Low leakage current... See More ⇒