Справочник MOSFET. TPC8001

 

TPC8001 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPC8001
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2.4 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 7 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 40 nC
   Время нарастания (tr): 9 ns
   Выходная емкость (Cd): 760 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для TPC8001

 

 

TPC8001 Datasheet (PDF)

 ..1. Size:336K  toshiba
 tpc8001.pdf

TPC8001 TPC8001

TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8001 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current

 8.1. Size:509K  toshiba
 tpc8004.pdf

TPC8001 TPC8001

TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8004 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 37 m (typ.) DS (ON) High forward transfer admittance : |Y | = 6 S (typ.) fs Low leakage current

 8.2. Size:295K  toshiba
 tpc8006-h.pdf

TPC8001 TPC8001

 8.3. Size:330K  toshiba
 tpc8003.pdf

TPC8001 TPC8001

TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 5.4 m (typ.) DS (ON) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current

 8.4. Size:182K  toshiba
 tpc8009-h.pdf

TPC8001 TPC8001

TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 29 nC (typ.) g Low drain-source ON resistance: R = 8 m

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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