All MOSFET. TPC8006-H Datasheet

 

TPC8006-H MOSFET. Datasheet pdf. Equivalent

Type Designator: TPC8006-H

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.4 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 290 pF

Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm

Package: SOP8

TPC8006-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPC8006-H Datasheet (PDF)

1.1. tpc8006-h.pdf Size:295K _toshiba2

TPC8006-H
TPC8006-H



4.1. tpc8004.pdf Size:509K _toshiba2

TPC8006-H
TPC8006-H

TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) TPC8004 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 37 mΩ (typ.) DS (ON) High forward transfer admittance : |Y | = 6 S (typ.) fs Low leakage current

4.2. tpc8001.pdf Size:336K _toshiba2

TPC8006-H
TPC8006-H

TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) TPC8001 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 15 mΩ (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current

4.3. tpc8009-h.pdf Size:182K _toshiba2

TPC8006-H
TPC8006-H

TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • High speed switching • Small gate charge: Q = 29 nC (typ.) g • Low drain-source ON resistance: R = 8 m

4.4. tpc8003.pdf Size:330K _toshiba2

TPC8006-H
TPC8006-H

TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 5.4 mΩ (typ.) DS (ON) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current

Datasheet: TPC6105 , TPC6106 , TPC6107 , TPC6108 , TPC6201 , TPC8001 , TPC8003 , TPC8004 , 2SK2837 , TPC8009-H , TPC8010-H , TPC8012-H , TPC8013-H , TPC8014 , TPC8016-H , TPC8017-H , TPC8018-H .

 


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