All MOSFET. TPC8006-H Datasheet

 

TPC8006-H MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPC8006-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOP8

 TPC8006-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPC8006-H Datasheet (PDF)

 ..1. Size:295K  toshiba
 tpc8006-h.pdf

TPC8006-H TPC8006-H

 8.1. Size:509K  toshiba
 tpc8004.pdf

TPC8006-H TPC8006-H

TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8004 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 37 m (typ.) DS (ON) High forward transfer admittance : |Y | = 6 S (typ.) fs Low leakage current

 8.2. Size:336K  toshiba
 tpc8001.pdf

TPC8006-H TPC8006-H

TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8001 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current

 8.3. Size:330K  toshiba
 tpc8003.pdf

TPC8006-H TPC8006-H

TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 5.4 m (typ.) DS (ON) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current

 8.4. Size:182K  toshiba
 tpc8009-h.pdf

TPC8006-H TPC8006-H

TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 29 nC (typ.) g Low drain-source ON resistance: R = 8 m

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