TPC8006-H Datasheet and Replacement

TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8004 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 37 m (typ.) DS (ON) High forward transfer admittance : |Y | = 6 S (typ.) fs Low leakage current

TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8001 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current

TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 5.4 m (typ.) DS (ON) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current

TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 29 nC (typ.) g Low drain-source ON resistance: R = 8 m