TPC8010-H Specs and Replacement
Type Designator: TPC8010-H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.1 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOP8
TPC8010-H substitution
- MOSFET ⓘ Cross-Reference Search
TPC8010-H datasheet
tpc8010-h.pdf
TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Q = 18 nC (typ.) g Low drain-source ON resistance RDS (ON) = 12 m (typ.) High fo... See More ⇒
tpc8016-h.pdf
TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 48 nc (typ.) Low drain-source ON resistance R = 3.7 m... See More ⇒
tpc8017-h.pdf
TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 25 nC (typ.) Low drain-source ON resistance RDS ... See More ⇒
tpc8018-h.pdf
TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Unit mm Applications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 12 nC (typ.) Low drain-source ON... See More ⇒
Detailed specifications: TPC6107, TPC6108, TPC6201, TPC8001, TPC8003, TPC8004, TPC8006-H, TPC8009-H, IRFZ44N, TPC8012-H, TPC8013-H, TPC8014, TPC8016-H, TPC8017-H, TPC8018-H, TPC8020-H, TPC8021-H
Keywords - TPC8010-H MOSFET specs
TPC8010-H cross reference
TPC8010-H equivalent finder
TPC8010-H pdf lookup
TPC8010-H substitution
TPC8010-H replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AGM30P05D
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2n5088 datasheet | irfp064n | tip31 transistor | 2sc1384 | mj21196g | irfb4115 | 21270 transistor | k3569