TPC8010-H - описание и поиск аналогов

TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Q = 18 nC (typ.) g Low drain-source ON resistance RDS (ON) = 12 m (typ.) High fo

TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 48 nc (typ.) Low drain-source ON resistance R = 3.7 m

TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 25 nC (typ.) Low drain-source ON resistance RDS

TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Unit mm Applications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 12 nC (typ.) Low drain-source ON

TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 11 m (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage curre

TPC8013-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8013-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 48 nc (typ.) Low drain-source ON resistance RDS (ON)

TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application Unit mm DC-DC Converters Low drain-source ON resistance RDS (ON) = 0.28 (typ.) High forward transfer admittance Y = 1.35 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement mode Vth = 3.0 to 5.0 V (VD

TPC8018-H www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch