TPC8012-H PDF and Equivalents Search

 

TPC8012-H Specs and Replacement

Type Designator: TPC8012-H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SOP8

TPC8012-H substitution

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TPC8012-H datasheet

 ..1. Size:125K  toshiba
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TPC8012-H

TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application Unit mm DC-DC Converters Low drain-source ON resistance RDS (ON) = 0.28 (typ.) High forward transfer admittance Y = 1.35 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement mode Vth = 3.0 to 5.0 V (VD... See More ⇒

 8.1. Size:79K  toshiba
tpc8016-h.pdf pdf_icon

TPC8012-H

TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 48 nc (typ.) Low drain-source ON resistance R = 3.7 m... See More ⇒

 8.2. Size:283K  toshiba
tpc8017-h.pdf pdf_icon

TPC8012-H

TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 25 nC (typ.) Low drain-source ON resistance RDS ... See More ⇒

 8.3. Size:175K  toshiba
tpc8010-h.pdf pdf_icon

TPC8012-H

TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Q = 18 nC (typ.) g Low drain-source ON resistance RDS (ON) = 12 m (typ.) High fo... See More ⇒

Detailed specifications: TPC6108, TPC6201, TPC8001, TPC8003, TPC8004, TPC8006-H, TPC8009-H, TPC8010-H, IRF3205, TPC8013-H, TPC8014, TPC8016-H, TPC8017-H, TPC8018-H, TPC8020-H, TPC8021-H, TPC8022-H

Keywords - TPC8012-H MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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