TPC8012-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPC8012-H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 23 ns
Cossⓘ - Выходная емкость: 260 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: SOP8
Аналог (замена) для TPC8012-H
TPC8012-H Datasheet (PDF)
tpc8012-h.pdf

TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application Unit: mmDC-DC Converters Low drain-source ON resistance: RDS (ON) = 0.28 (typ.) High forward transfer admittance: |Y | = 1.35 S (typ.) fs Low leakage current: I = 100 A (max) (V = 200 V) DSS DS Enhancement mode: Vth = 3.0 to 5.0 V (VD
tpc8016-h.pdf

TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R = 3.7 m
tpc8017-h.pdf

TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS
tpc8010-h.pdf

TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 18 nC (typ.) g Low drain-source ON resistance: RDS (ON) = 12 m (typ.) High fo
Другие MOSFET... TPC6108 , TPC6201 , TPC8001 , TPC8003 , TPC8004 , TPC8006-H , TPC8009-H , TPC8010-H , IRF3205 , TPC8013-H , TPC8014 , TPC8016-H , TPC8017-H , TPC8018-H , TPC8020-H , TPC8021-H , TPC8022-H .
History: NTMFS6H864NL | ME20P03-G | IRL3102SPBF
History: NTMFS6H864NL | ME20P03-G | IRL3102SPBF



Список транзисторов
Обновления
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