TPC8060-H
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC8060-H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 4.2
nS
Cossⓘ -
Output Capacitance: 860
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037
Ohm
Package:
SOP8
TPC8060-H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC8060-H
Datasheet (PDF)
..1. Size:218K toshiba
tpc8060-h.pdf 
TPC8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8060-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.1 m
8.1. Size:247K toshiba
tpc8066-h.pdf
TPC8066-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8066-HTPC8066-HTPC8066-HTPC8066-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.2 nC (typ.)(4) Lo
8.2. Size:229K toshiba
tpc8064-h.pdf
TPC8064-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8064-HTPC8064-HTPC8064-HTPC8064-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.0 nC (typ.)(4) Lo
8.3. Size:250K toshiba
tpc8067-h.pdf
TPC8067-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8067-HTPC8067-HTPC8067-HTPC8067-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.9 nC (typ.)(4) Lo
8.4. Size:222K toshiba
tpc8063-h.pdf
TPC8063-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8063-HTPC8063-HTPC8063-HTPC8063-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
8.5. Size:257K toshiba
tpc8065-h.pdf
TPC8065-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8065-HTPC8065-HTPC8065-HTPC8065-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 4.3 nC (typ.)(4) Lo
8.6. Size:216K toshiba
tpc8061-h.pdf
TPC8061-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8061-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 21 m
8.7. Size:223K toshiba
tpc8062-h.pdf
TPC8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8062-HTPC8062-HTPC8062-HTPC8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
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