TPC8107 MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC8107
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.9 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 130 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 1050 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: SOP8
TPC8107 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC8107 Datasheet (PDF)
0.1. tpc8107.pdf 
Size:224K _toshiba
TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 5.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 31 S (typ.) fs Low leakage
8.1. tpc8108.pdf Size:215K _toshiba
TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 9.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 24 S (typ.) fs Low leakage
8.2. tpc8109.pdf Size:215K _toshiba
TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8109 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 14 m (typ.) DS (ON) High forward transfer admittance: |Y | = 19 S (typ.) fs Low leakage c
8.3. tpc8104-h.pdf Size:315K _toshiba
TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8104-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 17 nC (typ.) Low drain-source ON resistan
8.4. tpc8105-h.pdf Size:320K _toshiba
TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8105-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 32 nC (typ.) Low drain-source ON resistan
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