TPC8107 - описание и поиск аналогов

TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 5.5 m (typ.) DS (ON) High forward transfer admittance Y = 31 S (typ.) fs Low leakage

TPC8107 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G

TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 9.5 m (typ.) DS (ON) High forward transfer admittance Y = 24 S (typ.) fs Low leakage

TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8105-H High Speed and High Efficiency DC-DC Converters Unit mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 32 nC (typ.) Low drain-source ON resistan

TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8104-H High Speed and High Efficiency DC-DC Converters Unit mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 17 nC (typ.) Low drain-source ON resistan

TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8109 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 14 m (typ.) DS (ON) High forward transfer admittance Y = 19 S (typ.) fs Low leakage c

TPC8103 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

TPC8104 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top V