Справочник MOSFET. TPC8107

 

TPC8107 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: TPC8107

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1.9 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 13 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 130 nC

Время нарастания (tr): 11 ns

Выходная емкость (Cd): 1050 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.007 Ohm

Тип корпуса: SOP8

Аналог (замена) для TPC8107

 

 

TPC8107 Datasheet (PDF)

1.1. tpc8107.pdf Size:224K _toshiba2

TPC8107
TPC8107

TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: R = 5.5 mΩ (typ.) DS (ON) • High forward transfer admittance: |Y | = 31 S (typ.) fs • Low leakage

4.1. tpc8104-h.pdf Size:315K _toshiba2

TPC8107
TPC8107

TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8104-H High Speed and High Efficiency DC-DC Converters Unit: mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 17 nC (typ.) Low drain-source ON resistan

4.2. tpc8109.pdf Size:215K _toshiba2

TPC8107
TPC8107

TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8109 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: R = 14 mΩ (typ.) DS (ON) • High forward transfer admittance: |Y | = 19 S (typ.) fs • Low leakage c

 4.3. tpc8105-h.pdf Size:320K _toshiba2

TPC8107
TPC8107

TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8105-H High Speed and High Efficiency DC-DC Converters Unit: mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 32 nC (typ.) Low drain-source ON resistan

4.4. tpc8108.pdf Size:215K _toshiba2

TPC8107
TPC8107

TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: R = 9.5 mΩ (typ.) DS (ON) • High forward transfer admittance: |Y | = 24 S (typ.) fs • Low leakage

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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Список транзисторов

Обновления

MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |
 

 

 

 

 

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