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TPC8117 Spec and Replacement


   Type Designator: TPC8117
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: SOP8

 TPC8117 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPC8117 Specs

 ..1. Size:214K  toshiba
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TPC8117

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8117 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 54 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -... See More ⇒

 8.1. Size:216K  toshiba
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TPC8117

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 17 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage ... See More ⇒

 8.2. Size:278K  toshiba
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TPC8117

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8114 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) High forward transfer admittance Yfs = 47 S (typ.) Low leakage curre... See More ⇒

 8.3. Size:274K  toshiba
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TPC8117

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8112 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 5.0m (typ.) High forward transfer admittance Yfs = 31 S (typ.) Low leakage curren... See More ⇒

Detailed specifications: TPC8109 , TPC8110 , TPC8111 , TPC8112 , TPC8113 , TPC8114 , TPC8115 , TPC8116-H , IRFP260 , TPC8118 , TPC8119 , TPC8121 , TPC8122 , TPC8203 , TPC8206 , TPC8207 , TPC8208 .

History: HM7746K | HM80N06KA | HFP4N90 | MTM13227 | TK7P60W5 | JBL112T | 3205PL

Keywords - TPC8117 MOSFET specs

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