All MOSFET. TPC8118 Datasheet

 

TPC8118 Datasheet and Replacement


   Type Designator: TPC8118
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 860 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SOP8
 

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TPC8118 Datasheet (PDF)

 ..1. Size:196K  toshiba
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TPC8118

TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8118 Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -

 8.1. Size:214K  toshiba
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TPC8118

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8117 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 3.0 m (typ.) High forward transfer admittance : |Yfs| = 54 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -

 8.2. Size:216K  toshiba
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TPC8118

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 17 m (typ.) DS (ON) High forward transfer admittance: |Y | = 16 S (typ.) fs Low leakage

 8.3. Size:278K  toshiba
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TPC8118

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8114 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage curre

Datasheet: TPC8110 , TPC8111 , TPC8112 , TPC8113 , TPC8114 , TPC8115 , TPC8116-H , TPC8117 , 2SK3568 , TPC8119 , TPC8121 , TPC8122 , TPC8203 , TPC8206 , TPC8207 , TPC8208 , TPC8209 .

History: ELM5K8473A | DH135N10P | UF840KL-TA3-R | SM2425PSAN | IPB60R380C6 | OSG65R200HF | TSM2N70CP

Keywords - TPC8118 MOSFET datasheet

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