All MOSFET. TPC8206 Datasheet

 

TPC8206 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPC8206
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOP8

 TPC8206 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPC8206 Datasheet (PDF)

 ..1. Size:219K  toshiba
 tpc8206.pdf

TPC8206 TPC8206

TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 40 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage c

 ..2. Size:912K  cn vbsemi
 tpc8206.pdf

TPC8206 TPC8206

TPC8206www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

 8.1. Size:300K  toshiba
 tpc8209.pdf

TPC8206 TPC8206

TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPC8209 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current:

 8.2. Size:215K  toshiba
 tpc8208.pdf

TPC8206 TPC8206

TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 6.3 S (typ.) Low leakage curre

 8.3. Size:288K  toshiba
 tpc8203.pdf

TPC8206 TPC8206

 8.4. Size:219K  toshiba
 tpc8207.pdf

TPC8206 TPC8206

TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage curren

 8.5. Size:894K  cn vbsemi
 tpc8209.pdf

TPC8206 TPC8206

TPC8209www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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