TPC8207 PDF and Equivalents Search

 

TPC8207 Specs and Replacement

Type Designator: TPC8207

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

TPC8207 substitution

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TPC8207 datasheet

 ..1. Size:219K  toshiba
 tpc8207.pdf pdf_icon

TPC8207

TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 16 m (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage curren... See More ⇒

 8.1. Size:300K  toshiba
 tpc8209.pdf pdf_icon

TPC8207

TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPC8209 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current ... See More ⇒

 8.2. Size:215K  toshiba
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TPC8207

TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance Yfs = 6.3 S (typ.) Low leakage curre... See More ⇒

 8.3. Size:219K  toshiba
 tpc8206.pdf pdf_icon

TPC8207

TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 40 m (typ.) DS (ON) High forward transfer admittance Y = 7.0 S (typ.) fs Low leakage c... See More ⇒

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Detailed specifications: TPC8116-H, TPC8117, TPC8118, TPC8119, TPC8121, TPC8122, TPC8203, TPC8206, 12N60, TPC8208, TPC8209, TPC8210, TPC8211, TPC8212-H, TPC8213-H, TPC8214-H, TPC8216-H

Keywords - TPC8207 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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