All MOSFET. TPC8207 Datasheet

 

TPC8207 Datasheet and Replacement


   Type Designator: TPC8207
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

 TPC8207 substitution

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TPC8207 Datasheet (PDF)

 ..1. Size:219K  toshiba
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TPC8207

TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage curren

 8.1. Size:300K  toshiba
 tpc8209.pdf pdf_icon

TPC8207

TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPC8209 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current:

 8.2. Size:215K  toshiba
 tpc8208.pdf pdf_icon

TPC8207

TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 6.3 S (typ.) Low leakage curre

 8.3. Size:219K  toshiba
 tpc8206.pdf pdf_icon

TPC8207

TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 40 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage c

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Datasheet: TPC8116-H , TPC8117 , TPC8118 , TPC8119 , TPC8121 , TPC8122 , TPC8203 , TPC8206 , 4N60 , TPC8208 , TPC8209 , TPC8210 , TPC8211 , TPC8212-H , TPC8213-H , TPC8214-H , TPC8216-H .

History: CHM6601PAGP | RQJ0302NGDQA | CHM63A3PAGP | HM70N90D | HUFA76409D3 | SVS14N65FD2 | ME2602

Keywords - TPC8207 MOSFET datasheet

 TPC8207 cross reference
 TPC8207 equivalent finder
 TPC8207 lookup
 TPC8207 substitution
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