Справочник MOSFET. TPC8207

 

TPC8207 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPC8207
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для TPC8207

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPC8207 Datasheet (PDF)

 ..1. Size:219K  toshiba
 tpc8207.pdf pdf_icon

TPC8207

TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage curren

 8.1. Size:300K  toshiba
 tpc8209.pdf pdf_icon

TPC8207

TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPC8209 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current:

 8.2. Size:215K  toshiba
 tpc8208.pdf pdf_icon

TPC8207

TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 6.3 S (typ.) Low leakage curre

 8.3. Size:219K  toshiba
 tpc8206.pdf pdf_icon

TPC8207

TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 40 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage c

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TPC8116-H , TPC8117 , TPC8118 , TPC8119 , TPC8121 , TPC8122 , TPC8203 , TPC8206 , 4N60 , TPC8208 , TPC8209 , TPC8210 , TPC8211 , TPC8212-H , TPC8213-H , TPC8214-H , TPC8216-H .

History: HMS75N65T | ME6874-G | SVT044R5NT | SUM90N10-8M2P | CHM5813ESQ2GP | RSS075P03TB

 

 
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